A 17.5dBm IIP3 high linear fully differential RF CMOS amplifier

Author

Yan, T.T. ; Shen, X.B. ; Jiang, P.C. ; Zhou, J.J.

Author_Institution

Sch. of Microelectron., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A high linear fully differential RF CMOS amplifier covering UHF band is presented in this paper. A novel structure with both NMOS and PMOS differential pairs is proposed to cancel IM3 induced by 1^st order derivative of transconductance (g_m\´) and 2^nd order derivative of transconductance (g_m"). With appropriate DC operating points and aspect ratios, the RF CMOS amplifier achieves 12.5dB noise figure (NF), 10.5dB voltage gain and 17.5dBm input third order intercept point (IIP3) with total current consumption of 2mA from 1.8V voltage supply. The proposed amplifier is designed in TSMC 0.18μm CMOS process.

Keywords

CMOS analogue integrated circuits; MOSFET; UHF amplifiers; differential amplifiers; IIP3; NMOS differential pair; PMOS differential pair; UHF band; current 2 mA; differential RF CMOS amplifier; noise figure 12.5 dB; size 0.18 mum; transconductance; voltage 1.8 V; CMOS integrated circuits; Differential amplifiers; Gain; Linearity; MOS devices; Radio frequency; Transconductance; Fully differential amplifier; IIP3; IM3; gm"; gm´; high linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117697

Filename

6117697