DocumentCode
2851512
Title
Degradation effects of gate oxide and STI charge in SOI LDMOS
Author
Zhu, Mingda ; Du, Gang ; Liu, Xiaoyan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
1
Lastpage
2
Abstract
In this paper, the effects of oxide charges at different locations on on-state and off-state performance of SOI LDMOS devices are investigated through simulation. According to the results, the channel end region and channel side of STI have great effect on device on-state performance while the drain side of STI greatly affect off-state performance.
Keywords
MOSFET; power semiconductor devices; silicon-on-insulator; SOI LDMOS; STI charge; channel end region; channel side; degradation effects; gate oxide; off-state performance; on-state performance; power semiconductor device; Degradation; Doping; Electric fields; Logic gates; Performance evaluation; Semiconductor process modeling; Solids; Oxide Charge Effect; SOI LDMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location
Tianjin
ISSN
Pending
Print_ISBN
978-1-4577-1998-1
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/EDSSC.2011.6117718
Filename
6117718
Link To Document