• DocumentCode
    2851573
  • Title

    Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices

  • Author

    Yu, D. ; Liu, L.F. ; Chen, B. ; Zhang, FF ; Gao, B. ; Fu, Y.H. ; Liu, X.Y. ; Kang, J.F. ; Zhang, X.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.
  • Keywords
    platinum compounds; random-access storage; silicon compounds; silver compounds; Ag-SiO2-Pt; RRAM device; multilevel resistive switching; resistance states; resistive random access memory; retention characteristics; Current measurement; Electrodes; Resistance; Silicon; Switches; Temperature measurement; Voltage measurement; Multilevel resistive switching; SiO2; resistive memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117721
  • Filename
    6117721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2851573