3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET

Author

Zhu, Shufang ; Wei, Kangliang ; Du, Gang ; Liu, Xiaoyan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.

Keywords

MOSFET; Monte Carlo methods; germanium; nanowires; 3D Monte Carlo simulation; 3D parallel Monte Carlo simulation; GAA Ge nanowire nMOSFET; device structures; effective potential method; gate-all-around germanium nMOSFET; high carrier mobility; Logic gates; MOSFET circuits; MOSFETs; Monte Carlo methods; Quantum mechanics; Solids; Three dimensional displays; 3D full band Monte Carlo simulation; Gate-All-Around mosfet; Germanium; Nanowire; effective potential method;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117723

Filename

6117723