3D modeling of CMOS image sensor: From process to opto-electronic response

Author

Li, Z. M Simon ; Xiao, Y.G. ; Uehara, K. ; Lestrade, M. ; Gao, S. ; Fu, Y. ; Li, Z.Q. ; Zhou, Y.J.

Author_Institution

Crosslight Software Inc., Burnaby, BC, Canada

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Three-dimensional (3D) modeling of CMOS active pixel image sensor from process to opto-electronic response is reported in this work. Process simulation is performed by Crosslight CSuprem while the optical effect is simulated by finite difference time domain technique and the electronic response by 3D drift-diffusion software APSYS. The electronic responses are presented versus various power intensity and illumination wavelength. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.

Keywords

CMOS image sensors; finite difference time-domain analysis; integrated optoelectronics; optimisation; 3D drift-diffusion software APSYS; 3D modeling optimization; CMOS active pixel image sensor; crosslight CSuprem; finite difference time domain technique; illumination wavelength; opto-electronic response; power intensity; process simulation; Lenses; Microoptics; Optical crosstalk; Optical filters; Optical imaging; Optical sensors; Three dimensional displays; CMOS image sensors; Sensors; TCAD software; active pixel image sensor; opto-electronic modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117732

Filename

6117732