Perspectives of TFETs for low power analog ICs

Author

Senale-Rodriguez, B. ; Yeqing Lu ; Fay, Patrick ; Jena, D. ; Seabaugh, Alan ; Xing, Huili Grace ; Barboni, L. ; Silveira, F.

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2012

fDate

9-10 Oct. 2012

Firstpage

1

Lastpage

3

Abstract

In this paper we show that tunnel field effect transistors (TFETs) biased in the subthreshold region promise several advantages for low-power/high-frequency analog IC applications (e.g. GHz operation with sub-0.1 mW power consumption). Analytical and TCAD models for graphene nano-ribbon (GNR) and InAs/GaSb nanowire TFETs are employed, respectively, for the first time in subthreshold analog circuit examples using the g_m/I_d integrated circuit (IC) design technique. From comparison of these TFET technologies with traditional FETs it is observed that due to the higher currents per unit gate width at low voltage for TFETs, smaller, higher speed, and lower power analog circuits are enabled.

Keywords

analogue integrated circuits; field effect transistors; graphene; integrated circuit design; low-power electronics; nanoribbons; nanowires; technology CAD (electronics); GNR; IC design technique; TCAD model; graphene nanoribbon; high-frequency analog IC; integrated circuit design; low power analog IC; nanowire TFET; subthreshold analog circuit; tunnel field effect transistor; CMOS integrated circuits; FETs; Logic gates; Space exploration; TFET; analog circuits; design space exploration; graphene; low-power electronics; sub-threshold;

fLanguage

English

Publisher

ieee

Conference_Titel

Subthreshold Microelectronics Conference (SubVT), 2012 IEEE

Conference_Location

Waltham, MA

Print_ISBN

978-1-4673-1586-9

Type

conf

DOI

10.1109/SubVT.2012.6404307

Filename

6404307