• DocumentCode
    2852967
  • Title

    Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors

  • Author

    Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Ferain, I. ; Das, S. ; Pavanello, Marcelo Antonio

  • Author_Institution
    Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work presented an experimental analysis of the LFN in p and n-type JNTs of different L and doping concentrations. JNTs have shown 1/f noise as the main noise component, which has been associated to CNF in nMOS and MF in the pMOS. Also, SId reduced with the rise of the doping concentration and with the raise of L.
  • Keywords
    1/f noise; MOSFET; doping profiles; nanoelectronics; nanowires; semiconductor device noise; semiconductor doping; 1/f noise; LFN; doping concentrations; low-frequency noise; n-type JNT; nMOS short channel junctionless nanowire transistors; noise component; p-type JNT; pMOS short channel junctionless nanowire transistors; Doping; Logic gates; MOSFETs; Noise; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404379
  • Filename
    6404379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852967