DocumentCode
2853013
Title
Experimental analog performance of pTFETs as a function of temperature
Author
Agopian, Paula G. D. ; Martino, M.D.V. ; Martino, Joao Antonio ; Rooyackers, R. ; Leonelli, Daniele ; Claeys, Cor
Author_Institution
PSI, LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
This paper presents an experimental study of the pTFET analog performance as a function of the temperature. It was observed that the gm improves with the temperature while the gD degrades. The gD degradation was the predominant effect which causes an AV reduction with temperature increase. However, independent of the temperature, comparing the pTFET and the pFinFET with the similar structure and same bias conditions, the first one presents a better analog performance in the temperature studied. The pTFET shows to be a good option for analog applications.
Keywords
MOSFET; AV reduction; experimental analog performance; pFinFET; pTFET analog performance; temperature function; Degradation; Logic gates; Performance evaluation; Photonic band gap; Temperature distribution; Temperature measurement; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404383
Filename
6404383
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