DocumentCode
2853023
Title
Electrically reprogrammable nonvolatile semiconductor memory
Author
Tarui, Yoichiro ; Hayashi, Yasuhiro ; Nagai, Kanto
Author_Institution
Electrotechnical Lab., Tokyo, Japan
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
52
Lastpage
53
Abstract
Devices capable of electrically-reprogrammable non-volatile memory action have been fabricated. Writing and rewriting are done by the injection of electrons and holes, respectively, into the floating silicon gate embedded in the oxide.
Keywords
Avalanche breakdown; Electrons; Equivalent circuits; Laboratories; MOSFETs; Nonvolatile memory; Read-write memory; Semiconductor memory; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155034
Filename
1155034
Link To Document