DocumentCode
2853128
Title
Experimental demonstration of A2RAM memory cell on SOI
Author
Rodriguez, N. ; Navarro, C. ; Gamiz, Francisco ; Andrieu, F. ; Faynot, O. ; Cristoloveanu, S.
Author_Institution
Nanoelectron. Res. Group, Univ. of Granada, Granada, Spain
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
The A2RAM memory cell has been fabricated and its operation demonstrated experimentally for the first time. The retrograde P-N channel doping allows the separation of electrons and holes in very thin films. We have documented attractive performance in terms of current margin, retention time, variability and cell disturbance immunity without any additional source/drain implantation optimization compared to logic transistor integration.
Keywords
random-access storage; semiconductor doping; semiconductor thin films; silicon-on-insulator; A2RAM memory cell; P-N channel doping; SOI; current margin; disturbance immunity; logic transistor integration; retention time; thin films; Doping profiles; Films; Logic gates; Performance evaluation; Transistors; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404392
Filename
6404392
Link To Document