DocumentCode
2853138
Title
Transient selection gates using breakdown
Author
Mar, Jeich
Author_Institution
Bell Telephone Labs., Inc., Murray Hill, N.J., USA
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
50
Lastpage
51
Abstract
A class of low-power transient gate circuits suitable for memory selection will be described. Charge storage and junction breakdown are utilized so that nonoverlapping pulses as narrow as 1 ns may be used without dc bias.
Keywords
Breakdown voltage; Capacitance; Diodes; Electric breakdown; Impedance; Laboratories; Power dissipation; Pulse amplifiers; Pulse circuits; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155040
Filename
1155040
Link To Document