DocumentCode
2854001
Title
Transformerless capacitive coupling of gate signals for series operation of power MOS devices
Author
Hess, Herbert L. ; Baker, R. Jacob
Author_Institution
Idaho Univ., Moscow, ID, USA
fYear
1999
fDate
36281
Firstpage
673
Lastpage
675
Abstract
A reliable configuration for triggering a series string of power MOS devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each MOSFET, except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage division across the network of device capacitance and inserted capacitances triggers the entire series stack reliably. Design formulae are presented and simple circuit protection is discussed. Simulation shows reliable operation and experimental verification is presented. Application of the method is applied to series IGBTs
Keywords
power MOSFET; power semiconductor switches; semiconductor device models; semiconductor device testing; switching; MOSFET triggering; capacitor; power MOS devices; series IGBTs; series operation; single input voltage signal; transformerless capacitive gate signals coupling; voltage division; Capacitance; Capacitors; Circuit simulation; Diodes; Insulated gate bipolar transistors; MOS devices; MOSFET circuits; Power MOSFET; Surge protection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Machines and Drives, 1999. International Conference IEMD '99
Conference_Location
Seattle, WA
Print_ISBN
0-7803-5293-9
Type
conf
DOI
10.1109/IEMDC.1999.769210
Filename
769210
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