• DocumentCode
    2854001
  • Title

    Transformerless capacitive coupling of gate signals for series operation of power MOS devices

  • Author

    Hess, Herbert L. ; Baker, R. Jacob

  • Author_Institution
    Idaho Univ., Moscow, ID, USA
  • fYear
    1999
  • fDate
    36281
  • Firstpage
    673
  • Lastpage
    675
  • Abstract
    A reliable configuration for triggering a series string of power MOS devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each MOSFET, except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage division across the network of device capacitance and inserted capacitances triggers the entire series stack reliably. Design formulae are presented and simple circuit protection is discussed. Simulation shows reliable operation and experimental verification is presented. Application of the method is applied to series IGBTs
  • Keywords
    power MOSFET; power semiconductor switches; semiconductor device models; semiconductor device testing; switching; MOSFET triggering; capacitor; power MOS devices; series IGBTs; series operation; single input voltage signal; transformerless capacitive gate signals coupling; voltage division; Capacitance; Capacitors; Circuit simulation; Diodes; Insulated gate bipolar transistors; MOS devices; MOSFET circuits; Power MOSFET; Surge protection; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Machines and Drives, 1999. International Conference IEMD '99
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-5293-9
  • Type

    conf

  • DOI
    10.1109/IEMDC.1999.769210
  • Filename
    769210