• DocumentCode
    285474
  • Title

    Compact CMOS power amplifier with trident output drivers

  • Author

    Lee, Bang W. ; Bae, Il S. ; Whang, In H.

  • Author_Institution
    Samsung Electronics Co., KyungGi-Do, South Korea
  • Volume
    2
  • fYear
    1992
  • fDate
    10-13 May 1992
  • Firstpage
    762
  • Abstract
    A novel circuit topology that requires only an additional 10 MOS transistors to convert a conventional transconductance amplifier into a CMOS power amplifier is presented. An amplifier with a die area of 800×250 μm2 in a 4-μm double-poly CMOS technology has been fabricated and tested. Measured results show 90 dB DC gain, 0.9-V/μs slew rate, and 0.04% distortion with 300 Ω and 1000-pF load with a 0.1-mW power dissipation
  • Keywords
    CMOS integrated circuits; linear integrated circuits; power amplifiers; power integrated circuits; 0.1 mW; 4 micron; 90 dB; CMOS power amplifier; MOS transistors; circuit topology; double-poly CMOS technology; power dissipation; trident output drivers; CMOS technology; Circuit testing; Circuit topology; Distortion measurement; Driver circuits; Gain measurement; MOSFETs; Power amplifiers; Power measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-0593-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1992.230110
  • Filename
    230110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=285474