• DocumentCode
    2855606
  • Title

    A graphical study of the current distribution in short-channel IGFETS

  • Author

    Hachtel, G. ; Mack, M.

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    A report on the effects of channel length, L, drain diffusion junction depth, ZDJ, and the scatter-limited saturation velocity, VSATN = 107cm/s on the current distribution in short N-channel enhancement mode IGFETs, studied numerically, will be offered.
  • Keywords
    Boron; Current distribution; Displays; Doping; Electric variables measurement; Electron mobility; Partial differential equations; Particle scattering; Poisson equations; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155193
  • Filename
    1155193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855606