• DocumentCode
    2855863
  • Title

    A one-transistor memory cell with nondestructive readout

  • Author

    Oldham, W. ; Cserveny, S. ; Sigmund, H.

  • Author_Institution
    University of California, Berkeley, CA, USA
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    This paper will describe a dynamic high-speed three-line access memory cell which occupies the area of a single bipolar transistor. New design is compatible with bipolar processing, with the addition of one extra masking step.
  • Keywords
    Bipolar transistors; Circuit testing; Contracts; Delay; Nonvolatile memory; Ohmic contacts; Pulse measurements; Schottky barriers; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155212
  • Filename
    1155212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855863