DocumentCode
2857353
Title
A 1024-bit bipolar RAM
Author
Tsang, F.
Author_Institution
Intel Corp., Santa Clara, CA, USA
Volume
XVII
fYear
1974
fDate
15-13 Feb. 1974
Firstpage
200
Lastpage
201
Abstract
The paper will discuss a low-power, high-performance static RAM using a compact inverted transistor flip-flop memory cell. Small chip size and conventional processing have been found to yield an economical device suited for mainframe storage applications.
Keywords
Artificial intelligence; Current supplies; Diodes; Flip-flops; Large scale integration; Power generation economics; Random access memory; Read-write memory; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1974.1155308
Filename
1155308
Link To Document