Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

In this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (L_LD) on the microscopic transport properties is exhaustively analyzed. Result show that increasing L_LD provides an enhancement of the device performance in terms of drain current and transconductance. However, for L_LD values larger than half of the channel the benefits are minimized from a microscopic point of view due to the increasing tendency of the device to behave as a lightly doped conventional transistor. This suggests the existence of an optimum L_LD value to fully benefit from the improvements provided by GC doping techniques.