Sn doped GaAs by CBE using tetramethyltin

Author

Núnez, C. García ; Ghita, D. ; García, B.J.

Author_Institution

Dept. de Fis. Aplic., Univ. Autonoma de Madrid, Madrid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

3

Abstract

Growth and characterization of tin doped GaAs(100) layers using chemical beam epitaxy are described in this work. The resistivity, type of carriers, as well as their net concentrations and mobilities were obtained by Hall Effect measurements. Layers with electron concentrations between 7.0×10¹⁶ and 1.6×10¹⁹ cm³ were obtained, while the measured room temperature mobilities were in the range 860-2700 cm²/Vs. Photoluminescence spectra show the presence of a donor related transition, whose intensity increases with the sample doping. Acceptor related transitions, different than the residual carbon doping, were not observed, suggesting that Sn incorporates as a donor with a small compensation ratio.

Keywords

Hall mobility; III-V semiconductors; chemical beam epitaxial growth; electrical resistivity; electron density; electron mobility; gallium arsenide; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; tin; CBE; GaAs:Sn; Hall effect measurement; carrier concentration; carrier mobility; chemical beam epitaxy; donor related transition; doping; electrical resistivity; electron concentration; epitaxial layers; photoluminescence spectra; room temperature mobility; temperature 293 K to 298 K; tetramethyltin; Carbon; Doping; Gallium arsenide; Impurities; Molecular beam epitaxial growth; Tin; doping; epitaxial growth; semiconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744204

Filename

5744204