Toward THz Gunn oscillations in planar GaN nanodiodes

Author

Íniguez-de-la-Torre, Ana ; Mateos, Javier ; Iniguez-de-la-Torre, Ignacio ; González, Tomás

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of high-frequency Gunn oscillations. For channel lengths of 1 μm, oscillation frequencies around 300 GHz are predicted, reaching more than 650 GHz for 0.4 μm. The intrinsic DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies.

Keywords

DC-AC power convertors; Gunn diodes; Gunn oscillators; Monte Carlo methods; gallium compounds; harmonic generation; nanoelectronics; DC to AC conversion efficiency; Monte Carlo simulations; THz Gunn oscillations; asymmetric nonlinear planar nanodiodes; channel lengths; fundamental harmonic frequency; high-frequency Gunn oscillations; oscillation frequency; second harmonic frequency; Aluminum gallium nitride; Doping; Gallium nitride; Monte Carlo methods; Oscillators; Semiconductor diodes; Semiconductor process modeling; Gunn oscillations; Monte Carlo simulations; Self-Swithcing Diodes; TeraHertz generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744219

Filename

5744219