• DocumentCode
    2859104
  • Title

    Startup transients and differences between P+N and N+P structures as determined by an analysis of TRAPATT diode-circuit interactions

  • Author

    Bogan, Z. ; Frey, Jesse

  • Author_Institution
    Cornell University, Ithaca, NY, USA
  • Volume
    XVIII
  • fYear
    1975
  • fDate
    27426
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    The transient behavior of P+N and N+P TRAPATT diodes will be compared for particular real-circuit environments to explain the higher efficiencies observed at lower current densities for N+P diodes, and provide a better understanding of startup transients associated with both types.
  • Keywords
    Charge carrier processes; Circuit analysis; Circuit optimization; Electron traps; Frequency; Oscillators; Packaging; Power system transients; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
  • Type

    conf

  • DOI
    10.1109/ISSCC.1975.1155422
  • Filename
    1155422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2859104