• DocumentCode
    2859870
  • Title

    High-Q GaAs tuning varactors

  • Author

    Kwan, F. ; Barrera, J. ; Solomon, R. ; DeFevere, D.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    120
  • Lastpage
    121
  • Abstract
    GaAs Schottky barrier tuning varactors with twice the Q of existing varactors will be described. Optimization of varactor diode quality factor Q involved minimization of device series resistance for a given diode breakdown voltage.
  • Keywords
    Capacitance; Conductivity; Electrical resistance measurement; Gallium arsenide; Loss measurement; Packaging; Schottky diodes; Skin effect; Substrates; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155474
  • Filename
    1155474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2859870