DocumentCode
2860229
Title
Chip and system characteristics of a 2048-bit MNOS-BORAM LSI circuit
Author
Lodi, R. ; Wegener, H.A. ; Kosicki, B. ; Borovicka, M. ; Moberg, W. ; Newman, Robert ; Beltz, C.
Author_Institution
Sperry Research Center, Sudbury, MA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
62
Lastpage
63
Abstract
A Block-Oriented Random-Access Memory utilizing non-volatile MOS memory will be discussed. Module organization is 32 blocks of 256 words, each word having 36 bits.
Keywords
Circuits; Dielectric devices; Dielectric substrates; Epitaxial layers; Frequency; Heart; Large scale integration; Manufacturing; Nonvolatile memory; Shift registers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155495
Filename
1155495
Link To Document