DocumentCode
2861481
Title
Comparing the parameters of PSP and BSIM4 models for 65 nm MOSFETs before and after hot-carrier stress
Author
Chen, Shuang-Yuan ; Chen, Yu ; Wu, Meng-Chiuan ; Huang, Heng-Sheng ; King, Chin-Lung ; Wu, Shin-Yi
Author_Institution
Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The object of our research is to compare PSP and BSIM4 model parameters for MOSFETs before and after hot-carrier stress. The first part is using MBP software to extract the parameters of 65 nm node MOSFETs with and without hot-carriers stress. Then, comparison of MOSFET parameters based on PSP and BSIM4 models is executed. We conclude that the PSP model is more accurate than BSIM4 model.
Keywords
MOSFET; hot carriers; BSIM4 model parameter; MBP software; MOSFET; PSP model parameter; hot-carrier stress; model builder program software; parameter extraction; size 65 nm; Degradation; Hot carriers; Integrated circuit modeling; Logic gates; MOSFETs; Scattering; Stress; BSIM4 model; Hot-carrier; PSP model;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991674
Filename
5991674
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