DocumentCode
2861495
Title
Electron beam-accessed data storage in MOS capacitors
Author
Arntz, F. ; Rockstad, H. ; Smith, D. ; Sah, C.
Author_Institution
Micro-Bit Corp., Lexington, MA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
176
Lastpage
177
Abstract
Electron beam access to nonvolatile block-organized data stored on 6-μm centers has been accomplished with 15 μs latency and 32 Mb/s system throughput. Mechanisms internal to the MOSC target will be described and ultimate limitations to data packing, latency, READ and WRITE throughputs reviewed.
Keywords
Electron beams; Electron optics; Electron tubes; Image storage; MOS capacitors; Memory; Microwave amplifiers; Physics; Semiconductor optical amplifiers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155569
Filename
1155569
Link To Document