DocumentCode

2863122

Title

Characterization of short and narrow channel effects for CAD-IGFET model

Author

Kotecha, H. ; De La Moneda, F. ; Beilstein, K.

Author_Institution

IBM Corp., Manassas, VA, USA

Volume

XX

fYear

1977

fDate

16-18 Feb. 1977

Firstpage

42

Lastpage

43

Keywords

Doping; Equations; Geometry; Intrusion detection; Length measurement; MOSFET circuits; Physics; Tail; Threshold voltage; Variable structure systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1977.1155682

Filename

1155682