Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

Author

Kaynak, M. ; Wietstruck, M. ; Zhang, W. ; Drews, J. ; Barth, R. ; Knoll, D. ; Korndorfer, F. ; Scholz, R. ; Schulz, K. ; Wipf, C. ; Tillack, B. ; Kaletta, K. ; Suchodoletz, M.V. ; Zoschke, K. ; Wilke, M. ; Ehrmann, O. ; Ulusoy, A.C. ; Purtova, T. ; Liu, G

Author_Institution

IHP, Im Technologiepark 25, 15236 Frankfurt Oder, Germany

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24 – 77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.

Keywords

BiCMOS integrated circuits; Glass; Inductors; Insertion loss; Loading; Radio frequency; Silicon; BiCMOS; RFMEMS; microelectromechanical devices; millimeter wave integrated circuits; packaging; switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6259417

Filename

6259417