• DocumentCode
    2864270
  • Title

    A 4K static bipolar TTL RAM

  • Author

    Okada, Kenichi ; Aomura, K. ; Nokubo, J. ; Shiba, H.

  • Author_Institution
    Nippon Electric Co., Kawasaki, Japan
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    This paper will describe a 40ns, 50mW, 4K static bipolar RAM that uses the polysilicon self-aligned method in combination with non-epi technology (diffused collector) and a local oxidation process to improve performance.
  • Keywords
    Aluminum; Driver circuits; Electrodes; Oxidation; P-n junctions; Parasitic capacitance; Random access memory; Read-write memory; Resistors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155751
  • Filename
    1155751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864270