• DocumentCode
    2864737
  • Title

    Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker

  • Author

    Urciuoli, D.P. ; Veliadis, Victor ; Ha, H.C. ; Lubomirsky, Vadim

  • Author_Institution
    U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2011
  • fDate
    6-11 March 2011
  • Firstpage
    354
  • Lastpage
    358
  • Abstract
    Bidirectional solid-state circuit breakers (BDSSCBs) can replace mechanical fault protection devices in systems having bidirectional current flow through a single bus, for increased transition speed, functionality, and reliability. Silicon carbide, 1200-V, 0.1-cm2 JFETs were designed and fabricated for the BDSSCB application. A novel BDSSCB gate driver was developed for both self-triggered temperature-compensated over-current protection, and external triggering. Bidirectional 600-V, 60-A fault isolation was demonstrated in a transition time of approximately 10 μs with two packaged JFET modules, a bidirectional RCD snubber, and a series distribution bus inductance of 20 μH.
  • Keywords
    junction gate field effect transistors; overcurrent protection; residual current devices; silicon compounds; BDSSCB gate driver; JFET modules; SiC; bidirectional RCD snubber; bidirectional solid-state circuit breakers; current 60 A; external triggering; self-triggered temperature-compensated overcurrent protection; voltage 1200 V; voltage 600 V; Circuit faults; Driver circuits; Inductance; JFETs; Logic gates; Silicon carbide; Snubbers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-8084-5
  • Type

    conf

  • DOI
    10.1109/APEC.2011.5744620
  • Filename
    5744620