MEMS Phase Shifters On Low-resistivity Silicon Wafer

Author

Guo, F. ; Zhang, Y. ; Lin, J. ; Kong, J. ; Zhu, S. ; Lai, Z. ; Zhu, Z.

Author_Institution

Dept. of Electron Eng., East China Normal Univ., Shanghai

fYear

2006

fDate

25-28 June 2006

Firstpage

497

Lastpage

501

Abstract

The basic structure of MEMS millimeter-wave phase shifters was consisted of a coplanar waveguide (CPW) transmission line periodically loaded with several thin metallic membranes. A new method was developed to obtain lower-loss microwave coplanar waveguide (CPW) by means of forming porous silicon (PS) on low-resistivity silicon wafer. The CPW fabricated on porous silicon (PS)/oxidated porous silicon (OPS) coated with polyimide had demonstrated lower loss than 0-7.5 dB/1.2 cm in 0-40 GHz, and comparison with quartz, low-resistivity silicon and multi-structure of poly-Si/SiO₂ on high-resistivity silicon in measure and analysis

Keywords

coatings; coplanar waveguides; electrical resistivity; elemental semiconductors; membranes; micromechanical devices; millimetre wave phase shifters; polymers; porous semiconductors; silicon; MEMS millimeter-wave phase shifters; coplanar waveguide transmission line; low-resistivity silicon wafer; metallic membranes; oxidated porous silicon; Biomembranes; Coplanar transmission lines; Coplanar waveguides; Loss measurement; Micromechanical devices; Microwave theory and techniques; Millimeter wave technology; Phase shifters; Polyimides; Silicon; PS substrate MEMS CPW phase shifters polyimid; insertion loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechatronics and Automation, Proceedings of the 2006 IEEE International Conference on

Conference_Location

Luoyang, Henan

Print_ISBN

1-4244-0465-7

Electronic_ISBN

1-4244-0466-5

Type

conf

DOI

10.1109/ICMA.2006.257603

Filename

4026133