• DocumentCode
    2865963
  • Title

    Microwave performance of power MOSFETs on SOI substrates

  • Author

    McShane, E. ; Shenai, K.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    148
  • Lastpage
    157
  • Abstract
    This paper presents the first results of lateral SOI power MOSFETs for RF applications in a modified 1.2-μm CMOS technology. Fabricated 30-V devices achieved an fT of 6.9 GHz and an fmax of 10.1 GHz. Model parameters were extracted, and a comparison of the measured and modeled results demonstrates a reasonable match. A Class A RF amplifier was also constructed and measured. It yielded an efficiency of 25% (identical to a similarly rated bulk LDMOSFET) with a maximum power output of 0.115 W
  • Keywords
    microwave field effect transistors; microwave power transistors; power MOSFET; silicon-on-insulator; 0.115 W; 1.2 micron; 10.1 GHz; 25 percent; 30 V; 6.9 GHz; CMOS technology; SOI substrate; class A RF amplifier; lateral power MOSFET; microwave characteristics; parameter extraction; CMOS technology; High power amplifiers; MOSFETs; Microwave amplifiers; Microwave devices; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
  • Conference_Location
    Ithaca, NY
  • ISSN
    1529-3068
  • Print_ISBN
    0-7803-6381-7
  • Type

    conf

  • DOI
    10.1109/CORNEL.2000.902532
  • Filename
    902532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2865963