10 Gb/s noise suppression using an ion implanted waveguide saturable absorber

Author

Pantouvaki, M. ; Kong, S.F. ; Fice, M.J. ; Seeds, A.J. ; Gwilliam, R.M. ; Cannard, P.

Author_Institution

Dept. of Electron. Eng., Univ. Coll. London, London

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Noise suppression of 3 dB per pass is demonstrated using a top-implanted passive InGaAsP/InGaAsP multiple quantum well ridge waveguide saturable absorber. The contrast ratio and recovery time are 3 dB and ~16 ps respectively.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical saturable absorption; optical waveguides; quantum well devices; ridge waveguides; semiconductor quantum wells; InGaAsP-InGaAsP; MQW ridge waveguide; implantation dose; ion implanted waveguide saturable absorber; noise suppression; passive multiple quantum well waveguide; Erbium-doped fiber amplifier; Noise figure; Noise reduction; Optical filters; Optical noise; Optical waveguides; PSNR; Quantum well devices; Semiconductor device noise; Semiconductor waveguides; (190.5970) Semiconductor nonlinear optics including MQW; (230.7370) Waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4627940

Filename

4627940