Degradation free fast switching 1200 V 50 a silicon carbide BJT´s

Silicon carbide (SiC) bipolar junction transistors (BJT´s) are normally-off fast switching devices with very low collector-emitter voltages (U_CE), combining the best of properties from unipolar and bipolar technology. They switch fast with turnoffs from semi saturated state without current tails and have the same time extremely low saturated U_CE values. SiC SBJT´s without bipolar degradation were fabricated and packaged in TO-247 packages. The BJT´s fabricated were characterized both statically and dynamically in a setup similar to a switching application, as well as tested for stability. A SPICE model was developed and simulations of the switching transitions were done and compared to measurements. Simulations of a boost converter were also done to show the efficiency improvements of a complete system made possible using this type of transistors.