DocumentCode
2866731
Title
Design and reliability of mesa-etched InP-based Geiger-mode avalanche photodiodes
Author
Smith, G.M. ; Donnelly, J.P. ; McIntosh, K.A. ; Duerr, E.K. ; Vineis, C.J. ; Shaver, D.C. ; Verghese, S. ; Funk, J.E. ; Mahan, J.M. ; Hopman, P.I. ; Mahoney, L.J. ; Molvar, K.M. ; O´Donnell, Frederick J. ; Oakley, D.C. ; Ray, K.G.
Author_Institution
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Design modifications to InP-based Geiger-mode avalanche photodiodes are described that improve reliability. Geiger-mode aging at multiple conditions can cause significant degradation in some design variants while linear mode (below breakdown) aging does not.
Keywords
II-VI semiconductors; avalanche photodiodes; indium compounds; Geiger-mode aging; InP; linear mode aging; mesa-etched Geiger-mode avalanche photodiodes; Aging; Avalanche photodiodes; Breakdown voltage; Degradation; Electric breakdown; Indium phosphide; Laser radar; Optical pulses; Passivation; Plasma temperature; (040.3780) Low light level; (060.4510) Optical communications; (230.5170) Photodiodes; (280.3640) Lidar;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627964
Filename
4627964
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