• DocumentCode
    2866929
  • Title

    Submicron channel MOS-IC technology

  • Author

    Yamaguchi, Toru ; Lust, M. ; Ragsdare, S. ; Sato, Seiki

  • Author_Institution
    Tektronix, Inc., Beaverton, OR, USA
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    The development of a submicron channel length MOS IC with a channel length of 0.3 to 0.9μm will be reported. Typical delay time per gate was in the range of subnanosecond to 2ns and power dissipation per gate was 0.3- 0.7mW.
  • Keywords
    Boron; Integrated circuit technology; Ion implantation; Oxidation; Power dissipation; Ring oscillators; Semiconductor films; Silicon; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155911
  • Filename
    1155911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866929