• DocumentCode
    2866983
  • Title

    Proximity effect correction in EB lithography for VSLI microfabrication

  • Author

    Sugiyama, N. ; Saitoh, K. ; Shimizu, Kazuo

  • Author_Institution
    VLSI Technology Research Assos/Cooperative Laboratories, Kawasaki, Japan
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    This paper will present a two-step automatic technique for proximity effect correction required in the small dimension exposure of EB lithography for VLSI microfabrication: 1) incident electron EB intensity is varied on each pattern and 2) dot beam is add-exposed at a corner or near pattern for shape dimension adjustment.
  • Keywords
    Computer simulation; Distribution functions; Least squares methods; Lithography; Proximity effect; Shape; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1155914
  • Filename
    1155914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866983