DocumentCode
2867233
Title
Improved linearity of power amplifier GaN MMIC for Ka-band SATCOM
Author
Darwish, Ali M. ; Qiu, Joe X. ; Viveiros, Edward A. ; Hung, H. Alfred
Author_Institution
2800 Powder Mill Rd., Adelphi, MD 20783, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
The linearity performance of a Ka-band power amplifier (PA) GaN MMIC with a novel balanced 4-way combiner is presented. The 32 – 38 GHz two-stage PA produces a maximum power of 6 watts for class-A bias. Improved linearity is demonstrated by biasing the first and second stages in deep class AB, and class A, respectively. This improvement in overall linearity is achieved as the gain expansion of the first stage is balanced by the gain compression of the second stage. Measured linearity performance is presented.
Keywords
Frequency modulation; Gallium nitride; HEMTs; Logic gates; MMICs; Phase shift keying; GaN MMIC; intermodulation distortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259625
Filename
6259625
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