• DocumentCode
    2868450
  • Title

    A UHF class E2 DC/DC converter using GaN HEMTs

  • Author

    Marante, Reinel ; Ruiz, M. Nieves ; Rizo, Leysi ; Cabria, Lorena ; Garcia, Jose A.

  • Author_Institution
    Dept. of Communications Engineering, University of Cantabria, 39005 Santander, SPAIN
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the design of a class E2 resonant DC/DC converter, operating at UHF band, is proposed. Combining the use of GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element multi-harmonic matching networks, a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power. By means of a Pulse Width Modulation (PWM) over the gate driving envelope, the output voltage may be controlled while keeping low switching losses, with an estimated small-signal bandwidth (BW) and a slew rate of 11 MHz and 630 V/µSeg, respectively.
  • Keywords
    DC-DC power converters; Gallium nitride; HEMTs; Inverters; MODFETs; Pulse width modulation; Radio frequency; Class E; DC/DC converter; GaN HEMTs; UHF;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259697
  • Filename
    6259697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868450