DocumentCode
2869569
Title
Three-dimensional finite element simulation of semiconductor devices
Author
Buturla, E. ; Cottrell, P. ; Grossman, Brett ; Salsburg, K. ; Lawlor, Mathew ; McMullen, C.
Author_Institution
IBM Corporation, Essex Junction, VT, USA
Volume
XXIII
fYear
1980
fDate
13-15 Feb. 1980
Firstpage
76
Lastpage
77
Abstract
Mobile carrier transport in semiconductors, simulated in three dimensions, using the finite element method, will be reported. The algorithm has been used to model the combined effect of short channel lengths and narrow channel widths on the threshold of an IGFET.
Keywords
Avalanche breakdown; Circuit simulation; FETs; Finite element methods; Integrated circuit interconnections; Interpolation; Nonlinear equations; Poisson equations; Predictive models; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1980.1156066
Filename
1156066
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