The light-emitting field effect transistor: A novel optoelectronic device concept

Author

Heeger, Alan ; Swensen, James ; Soci, Cesare

Author_Institution

Univ. of California at Santa Barbara, Santa Barbara, CA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report a semiconducting polymer light emitting field-effect transistor (LEFET) fabricated by employing a new "angled" evaporation technique to deposit the two electrodes (Ag for hole injection and Ca for electron injection). Under ambipolar conditions, recombination of electrons and holes resulted in the observation of a narrow zone of light emission within the channel. The emission zone moved across the channel as the gate bias was swept during collection of the transfer data.

Keywords

calcium; conducting polymers; electrodes; electron-hole recombination; field effect transistors; integrated optoelectronics; light emitting devices; silver; Ag; Ca; ambipolar conditions; angled evaporation; electrodes; electron injection; electron-hole recombination; emission zone; hole injection; light emission; light-emitting field effect transistor; optoelectronic device; semiconducting polymer transistor; Charge carrier processes; Electrodes; Electron emission; Electron mobility; FETs; Optoelectronic devices; Radiative recombination; Silicon; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628168

Filename

4628168