• DocumentCode
    2870687
  • Title

    A 0.05Ã\x970.05mm2 RFID Chip with Easily Scaled-Down ID-Memory

  • Author

    Usami, Mitsuo ; Tanabe, Hisao ; Sato, Akira ; Sakama, Isao ; Maki, Yukio ; Iwamatsu, Toshiaki ; Ipposhi, Takashi ; Inoue, Yasuo

  • Author_Institution
    Hitachi, Tokyo
  • fYear
    2007
  • fDate
    11-15 Feb. 2007
  • Firstpage
    482
  • Lastpage
    483
  • Abstract
    An ultra-small RFID chip uses an electron beam for writing 1T memory cells. A 90nm SOI CMOS process and double-surface electrode chip structures enable the design of 0.05times0.05mm2 and 5mum-thick RFID chips with small, low-cost and highly-reliable 128b ID-memory. The chip is verified at a carrier frequency of 2.45GHz with measured communication distance of 300mm.
  • Keywords
    CMOS integrated circuits; electron beams; integrated memory circuits; radiofrequency identification; radiofrequency integrated circuits; silicon-on-insulator; 128 bit; 2.45 GHz; 90 nm; SOI CMOS process; double-surface electrode chip structures; electron beam; memory cells; scaled-down ID-memory; ultra-small RFID chip; Control systems; Counting circuits; Dry etching; Electrodes; Nonvolatile memory; Pins; Radiofrequency identification; Semiconductor diodes; Tellurium; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0853-9
  • Electronic_ISBN
    0193-6530
  • Type

    conf

  • DOI
    10.1109/ISSCC.2007.373504
  • Filename
    4242475