A Single-Chip Bluetooth EDR Device in 0.13μm CMOS

Author

Marholev, B. ; Pan, M. ; Chien, E. ; Zhang, L. ; Roufoogaran, R. ; Wu, S. ; Bhatti, I. ; Lin, T.-H. ; Kappes, M. ; Khorram, S. ; Anand, S. ; Zolfaghari, A. ; Castaneda, J. ; Chien, C.M. ; Ibrahim, B. ; Jensen, H. ; Kim, H. ; Lettieri, P. ; Mak, S. ; Lin,

Author_Institution

Broadcom, Irvine, CA

fYear

2007

fDate

11-15 Feb. 2007

Firstpage

558

Lastpage

759

Abstract

A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm². Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.

Keywords

Bluetooth; CMOS integrated circuits; low-power electronics; receivers; transformers; transmitters; 0.13 micron; 1 Mbit/s; 2 Mbits/s; 3 Mbits/s; CMOS process; configurable transformer-based RF front-end; differential EVM; direct-conversion transmitter architecture; low-IF receiver; low-power single-chip Bluetooth device; Band pass filters; Bluetooth; Circuit topology; Energy consumption; Frequency; Low pass filters; MOS devices; Noise shaping; Radio transmitters; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

1-4244-0852-0

Electronic_ISBN

0193-6530

Type

conf

DOI

10.1109/ISSCC.2007.373542

Filename

4242513