Predictive modeling of the fatigue phenomenon for polycrystalline structural layers

Author

Millet, Olivier ; Bertrand, Pierre ; Legrand, Bernard ; Collard, Dominique ; Buchaillot, Lionel

Author_Institution

Inst. d´´Electron., de Micro-Electron. et de Nanotechnol., CNRS, Villeneuve d´´Ascq, France

fYear

2004

fDate

2004

Firstpage

145

Lastpage

148

Abstract

This paper deals with the fatigue phenomenon of microstructures which is scanned through the dynamic response of polycrystalline structural layers during operation. A predictive modeling of the fatigue phenomenon has been determined based on experimental results obtained by using M-Tests. First, we present the fabrication process and simulation results. Next, cyclic actuation has been performed and two different characterization methods have been used: pull-in voltage measurement and mechanical determination of the stiffness with an Atomic Force Microscope. A description of the fatigue phenomenon is proposed and, from experimental results, a predictive modeling has been built and compared to new characterization results in order to validate it. This modeling allows predicting the evolution of clamped-clamped beam stiffness vs. the number of operations.

Keywords

atomic force microscopy; crystal microstructure; elastic constants; elemental semiconductors; fatigue; microactuators; micromachining; semiconductor device models; semiconductor thin films; silicon; Si; atomic force microscopy; clamped-clamped beam stiffness; cyclic actuation; fatigue properties; microstructures; polycrystalline structural layers; predictive modeling; voltage measurement; Atomic force microscopy; Electrodes; Electrostatics; Fabrication; Fatigue; Performance evaluation; Predictive models; Stress; Testing; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290543

Filename

1290543