DocumentCode
2871826
Title
High-cycle fatigue damage evaluation for micro-nanoscale single crystal silicon under bending and tensile stressing
Author
Namazu, Takahiro ; Isono, Yoshitada
Author_Institution
Dept. of Mech. & Syst. Eng., Himeji Inst. of Technol., Hyogo, Japan
fYear
2004
fDate
2004
Firstpage
149
Lastpage
152
Abstract
This paper proposes a new high-cycle fatigue parameter for correlating fatigue lives of micro/nanoscale single crystal silicon (SCS) structures under bending and tensile stressing. The authors have reported the bending fatigue lives of nanoscale fixed-fixed SCS beams at MEMS 2003, and discussed the effects of specimen size, temperature and frequency on the fatigue lives. This research carried out fatigue tests of micro/nanoscale SCS structures under bending/tensile stressing for revealing the influence of deformation mode on SCS fatigue lives. Consequently, we enabled to propose an effective fatigue damage parameter for predicting fatigue lives of SCS structures ranging from micro-to nanoscale, regardless of deformation mode and specimen size. The fatigue damage parameter can be used for design of MEMS components subjected to fluctuating stressing.
Keywords
bending; elemental semiconductors; fatigue; fatigue testing; internal stresses; micromechanical devices; nanostructured materials; silicon; MEMS; Si; bending fatigue; bending stress; deformation; fatigue damage parameter; fatigue tests; microelectromechanical system; micronanoscale single crystal silicon; tensile stress; Atomic force microscopy; Fatigue; Frequency; Micromechanical devices; Silicon; Systems engineering and theory; Telephony; Temperature; Testing; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN
0-7803-8265-X
Type
conf
DOI
10.1109/MEMS.2004.1290544
Filename
1290544
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