• DocumentCode
    2871826
  • Title

    High-cycle fatigue damage evaluation for micro-nanoscale single crystal silicon under bending and tensile stressing

  • Author

    Namazu, Takahiro ; Isono, Yoshitada

  • Author_Institution
    Dept. of Mech. & Syst. Eng., Himeji Inst. of Technol., Hyogo, Japan
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    This paper proposes a new high-cycle fatigue parameter for correlating fatigue lives of micro/nanoscale single crystal silicon (SCS) structures under bending and tensile stressing. The authors have reported the bending fatigue lives of nanoscale fixed-fixed SCS beams at MEMS 2003, and discussed the effects of specimen size, temperature and frequency on the fatigue lives. This research carried out fatigue tests of micro/nanoscale SCS structures under bending/tensile stressing for revealing the influence of deformation mode on SCS fatigue lives. Consequently, we enabled to propose an effective fatigue damage parameter for predicting fatigue lives of SCS structures ranging from micro-to nanoscale, regardless of deformation mode and specimen size. The fatigue damage parameter can be used for design of MEMS components subjected to fluctuating stressing.
  • Keywords
    bending; elemental semiconductors; fatigue; fatigue testing; internal stresses; micromechanical devices; nanostructured materials; silicon; MEMS; Si; bending fatigue; bending stress; deformation; fatigue damage parameter; fatigue tests; microelectromechanical system; micronanoscale single crystal silicon; tensile stress; Atomic force microscopy; Fatigue; Frequency; Micromechanical devices; Silicon; Systems engineering and theory; Telephony; Temperature; Testing; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
  • Print_ISBN
    0-7803-8265-X
  • Type

    conf

  • DOI
    10.1109/MEMS.2004.1290544
  • Filename
    1290544