• DocumentCode
    2871841
  • Title

    Performance of dual-gate GaAs MESFETs as phase shifters

  • Author

    Pengelly, Raymond S. ; Suckling, C. ; Turner, Jessica

  • Author_Institution
    Plessey Research (Caswell) Ltd., Northants, England
  • Volume
    XXIV
  • fYear
    1981
  • fDate
    18-20 Feb. 1981
  • Firstpage
    142
  • Lastpage
    143
  • Abstract
    Investigations into the use of dual-gate GaAs MESFETs as phase shifters at S band have shown that a transmission phase shift up to 90° can be realized, and that the majority of this phase shift is due to the changes in device parameters interacting with the input matching network.
  • Keywords
    Circuit optimization; FETs; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFETs; Phase shifters; Phased arrays; Radar applications; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1981.1156199
  • Filename
    1156199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2871841