DocumentCode
2871923
Title
Effect of crystal orientation on fracture strength and fracture toughness of single crystal silicon
Author
Ando, Taeko ; Li, Xueping ; Nakao, Shigeki ; Kasai, Takashi ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution
Dept. of Micro Syst. Eng., Nagoya Univ., Japan
fYear
2004
fDate
2004
Firstpage
177
Lastpage
180
Abstract
This paper presents the dependence of fracture toughness, fracture strength, and fracture behavior, such as crack propagation, on the crystal orientation of single-crystal silicon. We conducted on-chip tensile testing to measure fracture strength and fracture toughness of single-crystal silicon films with [100] and [110] surface in the <100> and <110> loading direction. The loading direction had a significant effect on fracture toughness, which was 2.17 MPa√m in the <100> direction and 1.27 MPa√m in <110>. However, the fracture stress varies with both loading direction and surface orientation. We observed a fracture specimen on which a [111] cleavage plane eventually appeared on any crystal types of the specimen.
Keywords
cracks; crystal orientation; elemental semiconductors; fracture toughness; internal stresses; semiconductor thin films; silicon; tensile testing; MEMS; Si; Si[111] cleavage plane; crack propagation; crystal orientation effect; fracture strength; fracture stress; fracture toughness; loading direction; on-chip tensile testing; silicon [100] surface; silicon [110] surface; single crystal silicon films; surface orientation; Force measurement; Mechanical factors; Micromechanical devices; Semiconductor films; Semiconductor thin films; Silicon; Stress measurement; Surface cracks; Tensile stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN
0-7803-8265-X
Type
conf
DOI
10.1109/MEMS.2004.1290551
Filename
1290551
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