• DocumentCode
    2871923
  • Title

    Effect of crystal orientation on fracture strength and fracture toughness of single crystal silicon

  • Author

    Ando, Taeko ; Li, Xueping ; Nakao, Shigeki ; Kasai, Takashi ; Shikida, Mitsuhiro ; Sato, Kazuo

  • Author_Institution
    Dept. of Micro Syst. Eng., Nagoya Univ., Japan
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    This paper presents the dependence of fracture toughness, fracture strength, and fracture behavior, such as crack propagation, on the crystal orientation of single-crystal silicon. We conducted on-chip tensile testing to measure fracture strength and fracture toughness of single-crystal silicon films with [100] and [110] surface in the <100> and <110> loading direction. The loading direction had a significant effect on fracture toughness, which was 2.17 MPa√m in the <100> direction and 1.27 MPa√m in <110>. However, the fracture stress varies with both loading direction and surface orientation. We observed a fracture specimen on which a [111] cleavage plane eventually appeared on any crystal types of the specimen.
  • Keywords
    cracks; crystal orientation; elemental semiconductors; fracture toughness; internal stresses; semiconductor thin films; silicon; tensile testing; MEMS; Si; Si[111] cleavage plane; crack propagation; crystal orientation effect; fracture strength; fracture stress; fracture toughness; loading direction; on-chip tensile testing; silicon [100] surface; silicon [110] surface; single crystal silicon films; surface orientation; Force measurement; Mechanical factors; Micromechanical devices; Semiconductor films; Semiconductor thin films; Silicon; Stress measurement; Surface cracks; Tensile stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
  • Print_ISBN
    0-7803-8265-X
  • Type

    conf

  • DOI
    10.1109/MEMS.2004.1290551
  • Filename
    1290551