• DocumentCode
    2872644
  • Title

    Modified Leakage-Biased Domino Circuit with Low-Power and Low-Delay Characteristics

  • Author

    Rahmani, E. ; Pajouhi, Z. ; Kazemian-Amiri, N. ; Afzali-Kusha, A.

  • Author_Institution
    Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran
  • fYear
    2006
  • fDate
    16-19 Dec. 2006
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    In this paper, a new domino logic structure whose architecture is based on a leakage biased (LB) domino circuit is introduced. The proposed technique improves the performance and the dynamic power consumption of the circuits. In addition, the number of transistors is reduced leading to a lower silicon area. Simulations are done for various circuits. Compared to the LB method, in a full adder circuit, the delay is reduced more than 25%; also, the dynamic and the static powers have reduced slightly.
  • Keywords
    adders; integrated logic circuits; low-power electronics; domino logic structure; dynamic power consumption; full adder circuit; leakage-biased domino circuit; low-delay characteristics; low-power characteristics; CMOS logic circuits; Capacitance; Dynamic voltage scaling; Energy consumption; Inverters; Leakage current; Logic circuits; Power dissipation; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006. ICM '06. International Conference on
  • Conference_Location
    Dhahran
  • Print_ISBN
    1-4244-0764-8
  • Electronic_ISBN
    1-4244-0765-6
  • Type

    conf

  • DOI
    10.1109/ICM.2006.373282
  • Filename
    4243664