DocumentCode
2872981
Title
Novel cost-efficient packaging technology for high-power LDMOS devices
Author
Aboush, Zaid ; Benedikt, Johannes ; Priday, John ; Tasker, Paul
Author_Institution
Sch. of Eng., Cardiff Univ., UK
fYear
2005
fDate
5-6 Sept. 2005
Firstpage
15
Lastpage
18
Abstract
Packaging is crucial factor in maximizing the RF power transistors performance. Since the RF power device is the most expensive component within a high-power amplifier, there is a substantial market pressure to reduce the cost of the transistor and its packaging. This paper presents a novel packaging technology which uses the high-frequency laminates as a base material replacing the currently dominant ceramic packages.
Keywords
MOSFET; power amplifiers; power transistors; radiofrequency amplifiers; semiconductor device packaging; RF power transistor; cost-efficient packaging technology; high-power LDMOS device; high-power amplifier; laterally diffused metal-oxide semiconductor; Ceramics; Costs; Gold; Heat sinks; Isolation technology; Laminates; Packaging; Power transistors; Radio frequency; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN
0-7803-9500-X
Type
conf
DOI
10.1109/HFPSC.2005.1566350
Filename
1566350
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