DocumentCode
2873014
Title
Continuous-wave silicon lasers based on stimulated Raman scattering
Author
Rong, Haisheng ; Jones, Richard ; Liu, Ansheng ; Paniccia, Mario ; Cohen, Oded
Author_Institution
Intel Corp., Santa Clara, CA
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
Keywords
laser beams; microcavity lasers; p-i-n diodes; semiconductor lasers; silicon; stimulated Raman scattering; Si; continuous wave silicon lasers; laser cavity; lasing characteristic; nonlinear absorption reduction; reverse biased p-i-n diode structure; silicon waveguide cavity; stimulated Raman scattering; Coatings; Laser excitation; Optical films; Optical waveguides; P-i-n diodes; Pump lasers; Raman scattering; Silicon; Stimulated emission; Waveguide lasers; (130.0250) Optoelectronics; (140.3550) Lasers, Raman;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628349
Filename
4628349
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