DocumentCode
2873024
Title
A two-stage all monolithic X-band power amplifier
Author
Vorhaus, J. ; Pucel, R. ; Tajima, Y. ; Fabian, W.
Author_Institution
Raytheon Company, Waltham, MA, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
74
Lastpage
75
Abstract
An X-band amplifier which produces 565mW with 8dB gain (12dB small-signal gain), includes all bias and tuning circuits on-chip, and requires no bonding to a GaAs chip, will be discussed.
Keywords
Bonding; Capacitors; Circuit optimization; FETs; Gallium arsenide; Gold; Lead; Microstrip; Power amplifiers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156272
Filename
1156272
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