• DocumentCode
    2873486
  • Title

    Polaritons in high-quality AlGaN based microcavities

  • Author

    Mitrofanov, Oleg ; Schmult, S. ; Manfra, Michael J. ; Sergent, A.M. ; Molnar, R.J.

  • Author_Institution
    Bell Labs., Lucent Technol., Murray Hill, NJ
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We discuss polariton formation in high-quality stress compensated crack-free A10.13Ga0.87N/A10.56Ga0.44 N microcavities grown by molecular beam epitaxy on thick GaN templates. Microcavity design for studies of the strong coupling regime in GaN will be discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; micro-optics; microcavities; molecular beam epitaxial growth; polaritons; semiconductor growth; AlGaN; GaN; GaN templates; crack-free microcavities; high-quality microcavities; microcavity design; molecular beam epitaxy; polaritons; stress compensated microcavities; strong coupling regime; Aluminum gallium nitride; Gallium nitride; Microcavities; Molecular beam epitaxial growth; 230.5750; 300.6470;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628379
  • Filename
    4628379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873486